ST(B,F,P,W)10N95K5 دیتاشیت

ST(B,F,P,W)10N95K5

مشخصات دیتاشیت

نام دیتاشیت ST(B,F,P,W)10N95K5
حجم فایل 1360.501 کیلوبایت
نوع فایل pdf
تعداد صفحات 22

دانلود دیتاشیت ST(B,F,P,W)10N95K5

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سایر مستندات

STP10N95K5 22 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STF10N95K5
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 30W
  • Total Gate Charge (Qg@Vgs): 22nC@10V
  • Drain Source Voltage (Vdss): 950V
  • Input Capacitance (Ciss@Vds): 630pF@100V
  • Continuous Drain Current (Id): 8A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@100uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@4A,10V
  • Package: TO-220F
  • Manufacturer: STMicroelectronics
  • Series: SuperMESH5™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: STF10N
  • detail: N-Channel 950V 8A (Tc) 30W (Tc) Through Hole TO-220FP

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