STB60NF06LT4 دیتاشیت

STB60NF06LT4

مشخصات دیتاشیت

نام دیتاشیت STB60NF06LT4
حجم فایل 67.71 کیلوبایت
نوع فایل pdf
تعداد صفحات 16

مشاهده دیتاشیت STB60NF06LT4

دانلود دیتاشیت

سایر مستندات

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STB60NF06LT4
  • Operating Temperature: -65°C~+175°C@(Tj)
  • Power Dissipation (Pd): 110W
  • Total Gate Charge (Qg@Vgs): 66nC@4.5V
  • Drain Source Voltage (Vdss): 60V
  • Input Capacitance (Ciss@Vds): 2000pF@25V
  • Continuous Drain Current (Id): 60A
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 14mΩ@10V,30A
  • Package: TO-263
  • Manufacturer: STMicroelectronics
  • Series: STripFET™ II
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 4.5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: STB60N
  • detail: N-Channel 60V 60A (Tc) 110W (Tc) Surface Mount D2PAK

محصولات مشابه