STD10N60DM2 دیتاشیت

STD10N60DM2 Datasheet

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نام دیتاشیت STD10N60DM2 Datasheet
حجم فایل 827.513 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

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مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 109W
  • Total Gate Charge (Qg@Vgs): 15nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 529pF@100V
  • Continuous Drain Current (Id): 8A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 530mΩ@4A,10V
  • Package: TO-252-3(DPAK)
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ DM2
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 109W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: STD10
  • detail: N-Channel 650V 8A (Tc) 109W (Tc) Surface Mount DPAK

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