STP80N6F6 دیتاشیت

STP80N6F6

مشخصات دیتاشیت

نام دیتاشیت STP80N6F6
حجم فایل 55.038 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

مشاهده دیتاشیت STP80N6F6

دانلود دیتاشیت

سایر مستندات

STP80N6F6 12 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP80N6F6
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 120W
  • Total Gate Charge (Qg@Vgs): 122nC@10V
  • Drain Source Voltage (Vdss): 60V
  • Input Capacitance (Ciss@Vds): 7480pF@25V
  • Continuous Drain Current (Id): 110A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.8mΩ@10V,50A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7480pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
  • Base Part Number: STP80N
  • detail: N-Channel 60V 110A (Tc) 120W (Tc) Through Hole TO-220

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