STS8DN6LF6AG دیتاشیت

STS8DN6LF6AG

مشخصات دیتاشیت

نام دیتاشیت STS8DN6LF6AG
حجم فایل 58.994 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

مشاهده دیتاشیت STS8DN6LF6AG

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سایر مستندات

STS8DN6LF6AG Datasheet 13 pages

مشخصات فنی

  • RoHS: true
  • Type: 2 N-Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STS8DN6LF6AG
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 3.2W
  • Total Gate Charge (Qg@Vgs): 27nC@10V
  • Drain Source Voltage (Vdss): 60V
  • Input Capacitance (Ciss@Vds): 1340pF@25V
  • Continuous Drain Current (Id): 8A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 24mΩ@10V,4A
  • Package: SOP-8
  • Manufacturer: STMicroelectronics
  • Series: Automotive, AEC-Q101, STripFET™ F6
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 25V
  • Power - Max: 3.2W
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
  • Base Part Number: STS8DN
  • detail: Mosfet Array 2 N-Channel (Dual) 60V 8A (Ta) 3.2W Surface Mount 8-SO

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