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- دیتاشیت STB28N60M2
STB28N60M2 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STB28N60M2 |
|---|---|
| حجم فایل | 72.349 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 21 |
دانلود دیتاشیت STB28N60M2 |
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سایر مستندات
STx28N60M2 Datasheet 21 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STB28N60M2
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 170W
- Total Gate Charge (Qg@Vgs): 36nC@10V
- Input Capacitance (Ciss@Vds): 1440pF@100V
- Continuous Drain Current (Id): 22A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 150mΩ@11A,10V
- Package: TO-263-3
- Manufacturer: STMicroelectronics
- Series: MDmesh™ II Plus
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number: STB28N
- detail: N-Channel 600V 22A (Tc) 170W (Tc) Surface Mount D2PAK