STB10LN80K5 دیتاشیت

STB10LN80K5

مشخصات دیتاشیت

نام دیتاشیت STB10LN80K5
حجم فایل 56.603 کیلوبایت
نوع فایل pdf
تعداد صفحات 16

مشاهده دیتاشیت STB10LN80K5

دانلود دیتاشیت

سایر مستندات

STB10LN80K5 16 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STB10LN80K5
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 110W
  • Total Gate Charge (Qg@Vgs): 15nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 427pF@100V
  • Continuous Drain Current (Id): 8A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@100uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 630mΩ@10V,4A
  • Package: D2PAK
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ K5
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: STB10LN
  • detail: N-Channel 800V 8A (Tc) 110W (Tc) Surface Mount D2PAK

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