STGB19NC60HDT4 دیتاشیت

STGB19NC60HDT4

مشخصات دیتاشیت

نام دیتاشیت STGB19NC60HDT4
حجم فایل 742.041 کیلوبایت
نوع فایل pdf
تعداد صفحات 17

مشاهده دیتاشیت STGB19NC60HDT4

دانلود دیتاشیت

سایر مستندات

STGP19NC60HD 23 pages

STGx19NC60HD 23 pages

مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: STMicroelectronics STGB19NC60HDT4
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 40A
  • Power Dissipation (Pd): 130W
  • Turn?on Delay Time (Td(on)): 25ns
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 0.085mJ
  • Total Gate Charge (Qg@Ic,Vge): 53nC
  • Turn?off Delay Time (Td(off)): 97ns
  • Pulsed Collector Current (Icm): 60A
  • Turn?off Switching Loss (Eoff): 0.189mJ
  • Diode Reverse Recovery Time (Trr): 31ns
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.5V@15V,12A
  • Package: TO-263
  • Manufacturer: STMicroelectronics
  • Series: PowerMESH™
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
  • Power - Max: 130W
  • Switching Energy: 85µJ (on), 189µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 25ns/97ns
  • Test Condition: 390V, 12A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 31ns
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Base Part Number: STGB19
  • detail: IGBT 600V 40A 130W Surface Mount D2PAK

محصولات مشابه