CSD13201W10 دیتاشیت

CSD13201W10

مشخصات دیتاشیت

نام دیتاشیت CSD13201W10
حجم فایل 78.481 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت CSD13201W10

دانلود دیتاشیت

سایر مستندات

CSD13201W10 15 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD13201W10
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1.2W
  • Total Gate Charge (Qg@Vgs): 2.9nC@4.5V
  • Drain Source Voltage (Vdss): 12V
  • Input Capacitance (Ciss@Vds): 462pF@6V
  • Continuous Drain Current (Id): 1.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.1V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 34mΩ@1A,4.5V
  • Package: BGA-4
  • Manufacturer: Texas Instruments
  • FET Type: N-Channel
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Base Part Number: CSD132
  • Supplier Device Package: 4-DSBGA (1x1)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 462pF @ 6V
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Mounting Type: Surface Mount
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 1A, 4.5V
  • Packaging: Cut Tape (CT)
  • Series: NexFET™
  • Package / Case: 4-UFBGA, DSBGA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
  • Vgs (Max): ±8V
  • Part Status: Active
  • Power Dissipation (Max): 1.2W (Ta)
  • Technology: MOSFET (Metal Oxide)
  • detail: N-Channel 12V 1.6A (Ta) 1.2W (Ta) Surface Mount 4-DSBGA (1x1)

محصولات مشابه