STL40N10F7 دیتاشیت

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مشاهده دیتاشیت STL40N10F7	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: STMicroelectronics STL40N10F7
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 5W;70W
Total Gate Charge (Qg@Vgs): 19nC@10V
Drain Source Voltage (Vdss): 100V
Input Capacitance (Ciss@Vds): 1270pF@50V
Continuous Drain Current (Id): 40A
Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): 24mΩ@10A,10V
Package: FLAT-5x6
Manufacturer: STMicroelectronics
Series: DeepGATE™, STripFET™ VII
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 50V
FET Feature: -
Power Dissipation (Max): 5W (Ta), 70W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: PowerFlat™ (5x6)
Package / Case: 8-PowerVDFN
Base Part Number: STL40
detail: N-Channel 100V 40A (Tc) 5W (Ta), 70W (Tc) Surface Mount PowerFlat™ (5x6)