STF11NM50N دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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STF11NM50N
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حجم فایل
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58.004
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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13
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STF11NM50N
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Power Dissipation (Pd):
25W
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Total Gate Charge (Qg@Vgs):
19nC@10V
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Drain Source Voltage (Vdss):
500V
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Input Capacitance (Ciss@Vds):
547pF@50V
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Continuous Drain Current (Id):
8.5A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
470mΩ@10V,4.5A
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Package:
TO-220FPAB-3
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Manufacturer:
STMicroelectronics
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Series:
MDmesh™ II
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
500V
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Current - Continuous Drain (Id) @ 25°C:
8.5A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
470mOhm @ 4.5A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
19nC @ 10V
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Vgs (Max):
±25V
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Input Capacitance (Ciss) (Max) @ Vds:
547pF @ 50V
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FET Feature:
-
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Power Dissipation (Max):
25W (Tc)
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220FP
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Package / Case:
TO-220-3 Full Pack
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Base Part Number:
STF11
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detail:
N-Channel 500V 8.5A (Tc) 25W (Tc) Through Hole TO-220FP
