CSD17302Q5A دیتاشیت

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مشاهده دیتاشیت CSD17302Q5A	دانلود دیتاشیت

RoHS: true
Type: -
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD17302Q5A
Power Dissipation (Pd): -
Total Gate Charge (Qg@Vgs): -
Drain Source Voltage (Vdss): -
Input Capacitance (Ciss@Vds): -
Continuous Drain Current (Id): -
Gate Threshold Voltage (Vgs(th)@Id): -
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): -
Package: DFN-8(4.9x5.7)
Manufacturer: Texas Instruments
FET Type: N-Channel
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Base Part Number: CSD173
Supplier Device Package: 8-VSONP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 87A (Tc)
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 14A, 8V
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
Series: NexFET™
Package / Case: 8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs (Max): +10V, -8V
Part Status: Active
Power Dissipation (Max): 3W (Ta)
Technology: MOSFET (Metal Oxide)
detail: N-Channel 30V 16A (Ta), 87A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6)