CSD25211W1015 دیتاشیت

CSD25211W1015

مشخصات دیتاشیت

نام دیتاشیت CSD25211W1015
حجم فایل 77.601 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

مشاهده دیتاشیت CSD25211W1015

دانلود دیتاشیت

سایر مستندات

CSD25211W1015 Datasheet 13 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD25211W1015
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1W
  • Total Gate Charge (Qg@Vgs): 4.1nC@4.5V
  • Input Capacitance (Ciss@Vds): 570pF@10V
  • Continuous Drain Current (Id): 3.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.1V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 33mΩ@1.5A,4.5V
  • Package: BGA-6
  • Manufacturer: Texas Instruments
  • FET Type: P-Channel
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Base Part Number: CSD2521
  • Supplier Device Package: 6-DSBGA (1x1.5)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Mounting Type: Surface Mount
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 1.5A, 4.5V
  • Packaging: Cut Tape (CT)
  • Series: NexFET™
  • Package / Case: 6-UFBGA, DSBGA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
  • Vgs (Max): -6V
  • Part Status: Active
  • Power Dissipation (Max): 1W (Ta)
  • Technology: MOSFET (Metal Oxide)
  • detail: P-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5)

محصولات مشابه