SCTWA50N120 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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SCTWA50N120
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حجم فایل
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726.938
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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11
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مشخصات فنی
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Manufacturer:
STMicroelectronics
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Series:
-
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
SiCFET (Silicon Carbide)
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Drain to Source Voltage (Vdss):
1200V
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Current - Continuous Drain (Id) @ 25°C:
65A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
20V
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Rds On (Max) @ Id, Vgs:
69mOhm @ 40A, 20V
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Vgs(th) (Max) @ Id:
3V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
122nC @ 20V
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Vgs (Max):
+25V, -10V
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Input Capacitance (Ciss) (Max) @ Vds:
1900pF @ 400V
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FET Feature:
-
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Power Dissipation (Max):
318W (Tc)
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Operating Temperature:
-55°C ~ 200°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
HiP247™
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Package / Case:
TO-247-3
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Base Part Number:
SCTWA
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detail:
N-Channel 1200V 65A (Tc) 318W (Tc) Through Hole HiP247™
