CSD17577Q5AT دیتاشیت

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مشاهده دیتاشیت CSD17577Q5AT	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD17577Q5AT
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 3W;53W
Total Gate Charge (Qg@Vgs): 35nC@10V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 2310pF@15V
Continuous Drain Current (Id): 60A
Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 4.2mΩ@18A,10V
Package: VSONP-8
Manufacturer: Texas Instruments
FET Type: N-Channel
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Base Part Number: CSD175
Supplier Device Package: 8-VSONP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 15V
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V
Packaging: Cut Tape (CT)
Series: NexFET™
Package / Case: 8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs (Max): ±20V
Part Status: Active
Power Dissipation (Max): 3W (Ta), 53W (Tc)
Technology: MOSFET (Metal Oxide)
detail: N-Channel 30V 60A (Ta) 3W (Ta), 53W (Tc) Surface Mount 8-VSONP (5x6)