CSD86311W1723 دیتاشیت

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مشاهده دیتاشیت CSD86311W1723	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD86311W1723
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 1.5W
Total Gate Charge (Qg@Vgs): 4nC@4.5V
Drain Source Voltage (Vdss): 25V
Input Capacitance (Ciss@Vds): 585pF@12.5V
Continuous Drain Current (Id): 4.5A
Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 39mΩ@2A,8V
Package: BGA-12
Manufacturer: Texas Instruments
FET Type: 2 N-Channel (Dual)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Base Part Number: CSD86311
Supplier Device Package: 12-DSBGA
Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 12.5V
Power - Max: 1.5W
FET Feature: Logic Level Gate
Series: NexFET™
Current - Continuous Drain (Id) @ 25°C: 4.5A
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 39mOhm @ 2A, 8V
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Package / Case: 12-UFBGA, DSBGA
Part Status: Active
Drain to Source Voltage (Vdss): 25V
detail: Mosfet Array 2 N-Channel (Dual) 25V 4.5A 1.5W Surface Mount 12-DSBGA