STP110N8F7 دیتاشیت

STP110N8F7

مشخصات دیتاشیت

نام دیتاشیت STP110N8F7
حجم فایل 56.218 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

مشاهده دیتاشیت STP110N8F7

دانلود دیتاشیت

سایر مستندات

Spice Model Tutorial for Power MOSFETS 24 pages

STP110N8F7 Datasheet 13 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP110N8F7
  • Power Dissipation (Pd): 170W
  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 80A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.5mΩ@10V,40A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: STripFET™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46.8nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3435pF @ 40V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
  • Base Part Number: STP110
  • detail: N-Channel 80V 80A (Tc) 170W (Tc) Through Hole TO-220

محصولات مشابه