STD8N60DM2 Datasheet دیتاشیت

STD8N60DM2 Datasheet

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نام دیتاشیت STD8N60DM2 Datasheet
حجم فایل 386.71 کیلوبایت
نوع فایل pdf
تعداد صفحات 17

مشاهده دیتاشیت STD8N60DM2 Datasheet

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سایر مستندات

STD8N60DM2 17 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STD8N60DM2
  • Power Dissipation (Pd): 85W
  • Total Gate Charge (Qg@Vgs): 13.5nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 375pF@100V
  • Continuous Drain Current (Id): 8A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@100uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 600mΩ@10V,4A
  • Package: TO-252
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ DM2
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: STD8N
  • detail: N-Channel 600V 8A (Tc) 85W (Tc) Surface Mount DPAK

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