STP45N60DM6 & STW45N60DM6 دیتاشیت

STP45N60DM6 & STW45N60DM6

مشخصات دیتاشیت

نام دیتاشیت STP45N60DM6 & STW45N60DM6
حجم فایل 837.617 کیلوبایت
نوع فایل pdf
تعداد صفحات 16

مشاهده دیتاشیت STP45N60DM6 & STW45N60DM6

دانلود دیتاشیت

سایر مستندات

STP45N60DM6 16 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STW45N60DM6
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 210W
  • Total Gate Charge (Qg@Vgs): 44nC@10V
  • Input Capacitance (Ciss@Vds): 1920pF@100V
  • Continuous Drain Current (Id): 30A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.75V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 99mΩ@15A,10V
  • Package: TO-247
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ DM6
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 210W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
  • Base Part Number: STW45N
  • detail: N-Channel 600V 30A (Tc) 210W (Tc) Through Hole TO-247

محصولات مشابه