دیتاشیت SCTH100N65G2-7AG
مشخصات دیتاشیت
| نام دیتاشیت | SCTH100N65G2-7AG |
|---|---|
| حجم فایل | 632.371 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 15 |
دانلود دیتاشیت SCTH100N65G2-7AG |
SCTH100N65G2-7AG Datasheet |
|---|
مشخصات
- Manufacturer: STMicroelectronics
- Series: Automotive, AEC-Q101
- Part Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 162nC @ 18V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 520V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- detail: N-Channel 650V 95A (Tc) 360W (Tc) Surface Mount H2PAK-7
