STP5N62K3 دیتاشیت

STP5N62K3

مشخصات دیتاشیت

نام دیتاشیت STP5N62K3
حجم فایل 53.655 کیلوبایت
نوع فایل pdf
تعداد صفحات 27

مشاهده دیتاشیت STP5N62K3

دانلود دیتاشیت

سایر مستندات

STx5N62K3 27 pages

مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP5N62K3
  • Power Dissipation (Pd): -
  • Total Gate Charge (Qg@Vgs): -
  • Drain Source Voltage (Vdss): -
  • Input Capacitance (Ciss@Vds): -
  • Continuous Drain Current (Id): -
  • Gate Threshold Voltage (Vgs(th)@Id): -
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): -
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: SuperMESH3™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 620V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.1A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • Base Part Number: STP5N
  • detail: N-Channel 620V 4.2A (Tc) 70W (Tc) Through Hole TO-220AB

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