CSD17311Q5 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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CSD17311Q5
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حجم فایل
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91.357
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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11
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Texas Instruments CSD17311Q5
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Power Dissipation (Pd):
3.2W
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Drain Source Voltage (Vdss):
30V
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Continuous Drain Current (Id):
32A
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Gate Threshold Voltage (Vgs(th)@Id):
1.6V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
2mΩ@8V,30A
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Package:
VSON-8-EP(5x6)
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Manufacturer:
Texas Instruments
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FET Type:
N-Channel
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Vgs(th) (Max) @ Id:
1.6V @ 250µA
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Base Part Number:
CSD173
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Supplier Device Package:
8-VSON-CLIP (5x6)
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Drive Voltage (Max Rds On, Min Rds On):
3V, 8V
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Input Capacitance (Ciss) (Max) @ Vds:
4280pF @ 15V
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FET Feature:
-
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
32A (Ta), 100A (Tc)
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Mounting Type:
Surface Mount
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Rds On (Max) @ Id, Vgs:
2mOhm @ 30A, 8V
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Packaging:
Cut Tape (CT)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Series:
NexFET™
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Package / Case:
8-PowerTDFN
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Gate Charge (Qg) (Max) @ Vgs:
31nC @ 4.5V
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Vgs (Max):
+10V, -8V
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Part Status:
Active
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Power Dissipation (Max):
3.2W (Ta)
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Technology:
MOSFET (Metal Oxide)
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detail:
N-Channel 30V 32A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6)
