STD5NM50AG دیتاشیت

STD5NM50AG

مشخصات دیتاشیت

نام دیتاشیت STD5NM50AG
حجم فایل 53.077 کیلوبایت
نوع فایل pdf
تعداد صفحات 16

مشاهده دیتاشیت STD5NM50AG

دانلود دیتاشیت

سایر مستندات

STD5NM50AG 16 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STD5NM50AG
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 100W
  • Total Gate Charge (Qg@Vgs): 13nC@10V
  • Drain Source Voltage (Vdss): 500V
  • Input Capacitance (Ciss@Vds): 415pF@100V
  • Continuous Drain Current (Id): 7.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@2.5A,10V
  • Package: TO-252
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™
  • Packaging: Tape & Reel (TR)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: STD5N
  • detail: N-Channel 500V 7.5A (Tc) 100W (Tc) Surface Mount DPAK

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