STP7N52K3 دیتاشیت

STP7N52K3

مشخصات دیتاشیت

نام دیتاشیت STP7N52K3
حجم فایل 55.46 کیلوبایت
نوع فایل pdf
تعداد صفحات 21

دانلود دیتاشیت STP7N52K3

دانلود دیتاشیت

سایر مستندات

ST(B,D,F,P)7N52K3 21 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP7N52K3
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 90W
  • Total Gate Charge (Qg@Vgs): 33nC@0~10V
  • Drain Source Voltage (Vdss): 525V
  • Input Capacitance (Ciss@Vds): 870pF@50V
  • Continuous Drain Current (Id): 6A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.75V@50uA
  • Reverse Transfer Capacitance (Crss@Vds): 13pF@50V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 720mΩ@10V,3A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: SuperMESH3™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 525V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 737pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • Base Part Number: STP7N
  • detail: N-Channel 525V 6A (Tc) 90W (Tc) Through Hole TO-220AB

محصولات مشابه