STx(I)4N62K3 دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
STx(I)4N62K3
|
|
حجم فایل
|
1081.299
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
19
|
مشخصات فنی
-
Manufacturer:
STMicroelectronics
-
Series:
SuperMESH3™
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
620V
-
Current - Continuous Drain (Id) @ 25°C:
3.8A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
2Ohm @ 1.9A, 10V
-
Vgs(th) (Max) @ Id:
4.5V @ 50µA
-
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
550pF @ 50V
-
FET Feature:
-
-
Power Dissipation (Max):
70W (Tc)
-
Operating Temperature:
150°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
I-PAK
-
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
-
Base Part Number:
STU4N
-
detail:
N-Channel 620V 3.8A (Tc) 70W (Tc) Through Hole I-PAK
