STGB20M65DF2 دیتاشیت

STGB20M65DF2

مشخصات دیتاشیت

نام دیتاشیت STGB20M65DF2
حجم فایل 49.128 کیلوبایت
نوع فایل pdf
تعداد صفحات 18

مشاهده دیتاشیت STGB20M65DF2

دانلود دیتاشیت

سایر مستندات

STGB20M65DF2 18 pages

مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: STMicroelectronics STGB20M65DF2
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Collector Current (Ic): 40A
  • Power Dissipation (Pd): 166W
  • Turn?on Delay Time (Td(on)): 26ns
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 0.14mJ
  • Total Gate Charge (Qg@Ic,Vge): 63nC
  • Turn?off Delay Time (Td(off)): 108ns
  • Pulsed Collector Current (Icm): 80A
  • Turn?off Switching Loss (Eoff): 0.56mJ
  • Diode Reverse Recovery Time (Trr): 166ns
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,20A
  • Package: D2PAK
  • Manufacturer: STMicroelectronics
  • Series: M
  • Packaging: Tape & Reel (TR)
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 166W
  • Switching Energy: 140µJ (on), 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 63nC
  • Td (on/off) @ 25°C: 26ns/108ns
  • Test Condition: 400V, 20A, 12Ohm, 15V
  • Reverse Recovery Time (trr): 166ns
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Base Part Number: STGB20
  • detail: IGBT Trench Field Stop 650V 40A 166W Surface Mount D2PAK

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