STF26N65DM2 دیتاشیت

STF26N65DM2

مشخصات دیتاشیت

نام دیتاشیت STF26N65DM2
حجم فایل 51.238 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

مشاهده دیتاشیت STF26N65DM2

دانلود دیتاشیت

سایر مستندات

STF26N65DM2 13 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STF26N65DM2
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 30W
  • Total Gate Charge (Qg@Vgs): 35.5nC@0~10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 1.48nF@100V
  • Continuous Drain Current (Id): 20A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 2pF@100V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 156mΩ@10V,10A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ DM2
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35.5nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
  • detail: N-Channel 650V 20A (Tc) 30W (Tc) Through Hole TO-220FP

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