STx24N60M2 دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
STx24N60M2
|
|
حجم فایل
|
1594.123
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
21
|
مشخصات فنی
-
RoHS:
true
-
Type:
-
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
STMicroelectronics STW24N60M2
-
Power Dissipation (Pd):
-
-
Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
-
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
-
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
-
-
Package:
TO-247
-
Manufacturer:
STMicroelectronics
-
Series:
MDmesh™ II Plus
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
600V
-
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
190mOhm @ 9A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
-
Vgs (Max):
±25V
-
Input Capacitance (Ciss) (Max) @ Vds:
1060pF @ 100V
-
FET Feature:
-
-
Power Dissipation (Max):
150W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-247
-
Package / Case:
TO-247-3
-
Base Part Number:
STW24N
-
detail:
N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-247
