STW48N60M6-4 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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STW48N60M6-4
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حجم فایل
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56.495
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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12
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مشخصات فنی
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RoHS:
true
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Type:
-
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STW48N60M6-4
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Power Dissipation (Pd):
-
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Total Gate Charge (Qg@Vgs):
-
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Drain Source Voltage (Vdss):
-
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Input Capacitance (Ciss@Vds):
-
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Continuous Drain Current (Id):
-
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Gate Threshold Voltage (Vgs(th)@Id):
-
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
-
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Package:
TO-247-4
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Manufacturer:
STMicroelectronics
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Series:
MDmesh™ M6
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
600V
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Current - Continuous Drain (Id) @ 25°C:
39A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
69mOhm @ 19.5A, 10V
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Vgs(th) (Max) @ Id:
4.75V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
57nC @ 10V
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Vgs (Max):
±25V
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Input Capacitance (Ciss) (Max) @ Vds:
2578pF @ 100V
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FET Feature:
-
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Power Dissipation (Max):
250W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-247-4
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Package / Case:
TO-247-4
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detail:
N-Channel 600V 39A (Tc) 250W (Tc) Through Hole TO-247-4
