CSD18504KCS دیتاشیت

CSD18504KCS

مشخصات دیتاشیت

نام دیتاشیت CSD18504KCS
حجم فایل 82.977 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

دانلود دیتاشیت CSD18504KCS

دانلود دیتاشیت

سایر مستندات

CSD18504KCS 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD18504KCS
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 115W
  • Total Gate Charge (Qg@Vgs): 25nC@10V
  • Drain Source Voltage (Vdss): 40V
  • Input Capacitance (Ciss@Vds): 1800pF@20V
  • Continuous Drain Current (Id): 53A;100A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7mΩ@40A,10V
  • Package: TO-220
  • Manufacturer: Texas Instruments
  • FET Type: N-Channel
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Base Part Number: CSD1850
  • Supplier Device Package: TO-220-3
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 20V
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 100A (Tc)
  • Mounting Type: Through Hole
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
  • Packaging: Tube
  • Series: NexFET™
  • Package / Case: TO-220-3
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Vgs (Max): ±20V
  • Part Status: Active
  • Power Dissipation (Max): 115W (Tc)
  • Technology: MOSFET (Metal Oxide)
  • detail: N-Channel 40V 53A (Ta), 100A (Tc) 115W (Tc) Through Hole TO-220-3

محصولات مشابه