CSD19531KCS دیتاشیت

CSD19531KCS

مشخصات دیتاشیت

نام دیتاشیت CSD19531KCS
حجم فایل 83.12 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت CSD19531KCS

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سایر مستندات

CSD19531KCS 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD19531KCS
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 214W
  • Total Gate Charge (Qg@Vgs): 38nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 3870pF@50V
  • Continuous Drain Current (Id): 100A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.7mΩ@60A,10V
  • Package: TO-220
  • Manufacturer: Texas Instruments
  • FET Type: N-Channel
  • Vgs(th) (Max) @ Id: 3.3V @ 250µA
  • Base Part Number: CSD19531
  • Supplier Device Package: TO-220-3
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3870pF @ 50V
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Mounting Type: Through Hole
  • Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V
  • Packaging: Tube
  • Series: NexFET™
  • Package / Case: TO-220-3
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Vgs (Max): ±20V
  • Part Status: Active
  • Power Dissipation (Max): 214W (Tc)
  • Technology: MOSFET (Metal Oxide)
  • detail: N-Channel 100V 100A (Ta) 214W (Tc) Through Hole TO-220-3

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