STB12NM50ND دیتاشیت

ST STB12NM50ND

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نام دیتاشیت ST STB12NM50ND
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تعداد صفحات 16

مشاهده دیتاشیت ST STB12NM50ND

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مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STB12NM50ND
  • Power Dissipation (Pd): 100W
  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 11A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 380mΩ@10V,5.5A
  • Package: TO-263
  • Manufacturer: STMicroelectronics
  • Series: FDmesh™ II
  • Packaging: Cut Tape (CT)
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: STB12N
  • detail: N-Channel 500V 11A (Tc) 100W (Tc) Surface Mount D2PAK

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