STW27NM60ND دیتاشیت

STW27NM60ND

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نام دیتاشیت STW27NM60ND
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تعداد صفحات 19

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مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STW27NM60ND
  • Operating Temperature: +150°C@(Tj)
  • Power Dissipation (Pd): 160W
  • Total Gate Charge (Qg@Vgs): 80nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 2.4nF@50V
  • Continuous Drain Current (Id): 21A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 15pF@50V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 130mΩ@10V,10.5A
  • Package: TO-247
  • Manufacturer: STMicroelectronics
  • Series: Automotive, AEC-Q101, FDmesh™ II
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
  • Base Part Number: STW27N
  • detail: N-Channel 600V 21A (Tc) 160W (Tc) Through Hole TO-247-3

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