TPS1100D دیتاشیت

TPS1100D

مشخصات دیتاشیت

نام دیتاشیت TPS1100D
حجم فایل 86.251 کیلوبایت
نوع فایل pdf
تعداد صفحات 15

مشاهده دیتاشیت TPS1100D

دانلود دیتاشیت

سایر مستندات

TPS1100, TPS1100Y 14 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments TPS1100D
  • Operating Temperature: -40°C~+150°C@(Tj)
  • Power Dissipation (Pd): 791mW
  • Total Gate Charge (Qg@Vgs): 5.45nC@10V
  • Drain Source Voltage (Vdss): 15V
  • Continuous Drain Current (Id): 1.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 180mΩ@1.5A,10V
  • Package: SOP-8
  • Manufacturer: Texas Instruments
  • FET Type: P-Channel
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Base Part Number: TPS110
  • Supplier Device Package: 8-SOIC
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 15V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Mounting Type: Surface Mount
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
  • Packaging: Tube
  • Series: -
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
  • Vgs (Max): +2V, -15V
  • Part Status: Active
  • Power Dissipation (Max): 791mW (Ta)
  • Technology: MOSFET (Metal Oxide)
  • detail: P-Channel 15V 1.6A (Ta) 791mW (Ta) Surface Mount 8-SOIC

محصولات مشابه