CSD87384MT دیتاشیت

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مشاهده دیتاشیت CSD87384MT	دانلود دیتاشیت

RoHS: true
Type: 2 N-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD87384MT
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 8W
Total Gate Charge (Qg@Vgs): 9.2nC@4.5V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 1150pF@15V
Continuous Drain Current (Id): 30A
Gate Threshold Voltage (Vgs(th)@Id): 1.9V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 7.7mΩ@8V,25A
Package: PTAB-5
Manufacturer: Texas Instruments
FET Type: 2 N-Channel (Half Bridge)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Base Part Number: CSD87384
Supplier Device Package: 5-PTAB (5x3.5)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Power - Max: 8W
FET Feature: Logic Level Gate
Series: NexFET™
Current - Continuous Drain (Id) @ 25°C: 30A
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 25A, 8V
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V
Package / Case: 5-LGA
Part Status: Active
Drain to Source Voltage (Vdss): 30V
detail: Mosfet Array 2 N-Channel (Half Bridge) 30V 30A 8W Surface Mount 5-PTAB (5x3.5)