STS19N3LLH6 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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STS19N3LLH6
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حجم فایل
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878.476
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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14
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مشخصات فنی
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Manufacturer:
STMicroelectronics
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Series:
DeepGATE™, STripFET™ VI
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Packaging:
Cut Tape (CT)
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Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
5.6mOhm @ 9.5A, 10V
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Vgs(th) (Max) @ Id:
1V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
17nC @ 15V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
1690pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
2.7W (Ta)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
8-SO
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Package / Case:
8-SOIC (0.154", 3.90mm Width)
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Base Part Number:
STS19
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detail:
N-Channel 30V 19A (Tc) 2.7W (Ta) Surface Mount 8-SO
