STFI11N65M2 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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STF(I)11N65M2
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حجم فایل
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460.937
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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12
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مشخصات فنی
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Manufacturer:
STMicroelectronics
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Series:
MDmesh™ II Plus
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Packaging:
Tube
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Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
650V
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Current - Continuous Drain (Id) @ 25°C:
7A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
670mOhm @ 3.5A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
12.5nC @ 10V
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Vgs (Max):
±25V
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Input Capacitance (Ciss) (Max) @ Vds:
410pF @ 100V
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FET Feature:
-
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Power Dissipation (Max):
25W (Tc)
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
I2PAKFP (TO-281)
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Package / Case:
TO-262-3 Full Pack, I²Pak
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Base Part Number:
STFI11N
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detail:
N-Channel 650V 7A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)
