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- دیتاشیت CSD18510KTTT
CSD18510KTTT دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | CSD18510KTTT |
|---|---|
| حجم فایل | 81.734 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 13 |
دانلود دیتاشیت CSD18510KTTT |
دانلود دیتاشیت |
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سایر مستندات
CSD18510KTT 12 pages
CSD18510KTTT 13 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Texas Instruments CSD18510KTTT
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 250W
- Total Gate Charge (Qg@Vgs): 132nC@10V
- Drain Source Voltage (Vdss): 40V
- Input Capacitance (Ciss@Vds): 11400pF@15V
- Continuous Drain Current (Id): 274A
- Gate Threshold Voltage (Vgs(th)@Id): 2.3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.6mΩ@100A,10V
- Package: TO-263-3
- Manufacturer: Texas Instruments
- Power Dissipation (Max): 250W (Ta)
- Base Part Number: CSD1851
- Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
- FET Feature: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Series: NexFET™
- Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
- Supplier Device Package: DDPAK/TO-263-3
- Vgs (Max): ±20V
- Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
- Drain to Source Voltage (Vdss): 40V
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 15V
- Packaging: Cut Tape (CT)
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Mounting Type: Surface Mount
- Technology: MOSFET (Metal Oxide)
- Part Status: Active
- FET Type: N-Channel
- detail: N-Channel 40V 274A (Tc) 250W (Ta) Surface Mount DDPAK/TO-263-3
