CSD18542KCS دیتاشیت

CSD18542KCS

مشخصات دیتاشیت

نام دیتاشیت CSD18542KCS
حجم فایل 80.552 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

مشاهده دیتاشیت CSD18542KCS

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سایر مستندات

CSD18542KCS Datasheet 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD18542KCS
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 200W
  • Total Gate Charge (Qg@Vgs): 57nC@10V
  • Input Capacitance (Ciss@Vds): 5070pF@30V
  • Continuous Drain Current (Id): 200A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 44mΩ@100A,10V
  • Package: TO-220
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 200W (Tc)
  • Base Part Number: CSD1854
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
  • FET Feature: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Series: NexFET™
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
  • Supplier Device Package: TO-220-3
  • Vgs (Max): ±20V
  • Package / Case: TO-220-3
  • Drain to Source Voltage (Vdss): 60V
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 100A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5070pF @ 30V
  • Packaging: Tray
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Mounting Type: Through Hole
  • Technology: MOSFET (Metal Oxide)
  • Part Status: Active
  • FET Type: N-Channel
  • detail: N-Channel 60V 200A (Ta) 200W (Tc) Through Hole TO-220-3

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