CSD17579Q5AT دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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CSD17579Q5AT
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حجم فایل
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72.448
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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17
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Texas Instruments CSD17579Q5AT
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
3.1W;36W
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Total Gate Charge (Qg@Vgs):
15.1nC@10V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
1030pF@15V
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Continuous Drain Current (Id):
25A
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Gate Threshold Voltage (Vgs(th)@Id):
2V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
9.7mΩ@8A,10V
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Package:
VSONP-8
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Manufacturer:
Texas Instruments
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Power Dissipation (Max):
3.1W (Ta), 36W (Tc)
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Base Part Number:
CSD175
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Gate Charge (Qg) (Max) @ Vgs:
15.1nC @ 10V
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FET Feature:
-
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Series:
NexFET™
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Current - Continuous Drain (Id) @ 25°C:
25A (Ta)
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Supplier Device Package:
8-VSONP (5x6)
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Vgs (Max):
±20V
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Package / Case:
8-PowerTDFN
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Drain to Source Voltage (Vdss):
30V
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Rds On (Max) @ Id, Vgs:
9.7mOhm @ 8A, 10V
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Input Capacitance (Ciss) (Max) @ Vds:
1030pF @ 15V
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Packaging:
Cut Tape (CT)
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Vgs(th) (Max) @ Id:
2V @ 250µA
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Mounting Type:
Surface Mount
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Technology:
MOSFET (Metal Oxide)
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Part Status:
Active
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FET Type:
N-Channel
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detail:
N-Channel 30V 25A (Ta) 3.1W (Ta), 36W (Tc) Surface Mount 8-VSONP (5x6)
