CSD18536KTTT دیتاشیت

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مشاهده دیتاشیت CSD18536KTTT	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD18536KTTT
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 375W
Total Gate Charge (Qg@Vgs): 140nC@10V
Input Capacitance (Ciss@Vds): 11430pF@30V
Continuous Drain Current (Id): 200A;349A
Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 1.6mΩ@100A,10V
Package: TO-263-3
Manufacturer: Texas Instruments
Power Dissipation (Max): 375W (Tc)
Base Part Number: CSD1853
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
FET Feature: -
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Series: NexFET™
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 349A (Tc)
Supplier Device Package: DDPAK/TO-263-3
Vgs (Max): ±20V
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Drain to Source Voltage (Vdss): 60V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 11430pF @ 30V
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
detail: N-Channel 60V 200A (Ta), 349A (Tc) 375W (Tc) Surface Mount DDPAK/TO-263-3