CSD87312Q3E دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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CSD87312Q3E
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حجم فایل
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835.112
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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12
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مشخصات فنی
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Base Part Number:
CSD87312
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Gate Charge (Qg) (Max) @ Vgs:
8.2nC @ 4.5V
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Package / Case:
8-PowerTDFN
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Series:
NexFET™
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Input Capacitance (Ciss) (Max) @ Vds:
1250pF @ 15V
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Vgs(th) (Max) @ Id:
1.3V @ 250µA
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Current - Continuous Drain (Id) @ 25°C:
27A
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Power - Max:
2.5W
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Supplier Device Package:
8-VSON (3.3x3.3)
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Mounting Type:
Surface Mount
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Drain to Source Voltage (Vdss):
30V
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Rds On (Max) @ Id, Vgs:
33mOhm @ 7A , 8V
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Part Status:
Active
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Packaging:
Cut Tape (CT)
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Manufacturer:
Texas Instruments
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FET Feature:
Logic Level Gate
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FET Type:
2 N-Channel (Dual) Common Source
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detail:
Mosfet Array 2 N-Channel (Dual) Common Source 30V 27A 2.5W Surface Mount 8-VSON (3.3x3.3)
