دیتاشیت CSD87312Q3E
مشخصات دیتاشیت
| نام دیتاشیت |
CSD87312Q3E
|
| حجم فایل |
835.112
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
12
|
مشخصات
-
Base Part Number:
CSD87312
-
Gate Charge (Qg) (Max) @ Vgs:
8.2nC @ 4.5V
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Package / Case:
8-PowerTDFN
-
Series:
NexFET™
-
Input Capacitance (Ciss) (Max) @ Vds:
1250pF @ 15V
-
Vgs(th) (Max) @ Id:
1.3V @ 250µA
-
Current - Continuous Drain (Id) @ 25°C:
27A
-
Power - Max:
2.5W
-
Supplier Device Package:
8-VSON (3.3x3.3)
-
Mounting Type:
Surface Mount
-
Drain to Source Voltage (Vdss):
30V
-
Rds On (Max) @ Id, Vgs:
33mOhm @ 7A , 8V
-
Part Status:
Active
-
Packaging:
Cut Tape (CT)
-
Manufacturer:
Texas Instruments
-
FET Feature:
Logic Level Gate
-
FET Type:
2 N-Channel (Dual) Common Source
-
detail:
Mosfet Array 2 N-Channel (Dual) Common Source 30V 27A 2.5W Surface Mount 8-VSON (3.3x3.3)
