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CSD87312Q3E Datasheet
Datasheet specifications
| Datasheet's name | CSD87312Q3E |
|---|---|
| File size | 835.112 KB |
| File type | |
| Number of pages | 12 |
Download Datasheet CSD87312Q3E |
Download Datasheet |
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Other documentations
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Technical specifications
- Base Part Number: CSD87312
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerTDFN
- Series: NexFET™
- Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Current - Continuous Drain (Id) @ 25°C: 27A
- Power - Max: 2.5W
- Supplier Device Package: 8-VSON (3.3x3.3)
- Mounting Type: Surface Mount
- Drain to Source Voltage (Vdss): 30V
- Rds On (Max) @ Id, Vgs: 33mOhm @ 7A , 8V
- Part Status: Active
- Packaging: Cut Tape (CT)
- Manufacturer: Texas Instruments
- FET Feature: Logic Level Gate
- FET Type: 2 N-Channel (Dual) Common Source
- detail: Mosfet Array 2 N-Channel (Dual) Common Source 30V 27A 2.5W Surface Mount 8-VSON (3.3x3.3)