CSD22205L Datasheet دیتاشیت

CSD22205L Datasheet

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نام دیتاشیت CSD22205L Datasheet
حجم فایل 1220.159 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

مشاهده دیتاشیت CSD22205L Datasheet

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سایر مستندات

CSD22205LT 14 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD22205LT
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 600mW
  • Total Gate Charge (Qg@Vgs): 8.5nC@4.5V
  • Drain Source Voltage (Vdss): 8V
  • Input Capacitance (Ciss@Vds): 1390pF@4V
  • Continuous Drain Current (Id): 7.4A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.05V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.9mΩ@1A,4.5V
  • Package: PicoStar-4
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 600mW (Ta)
  • Base Part Number: CSD222
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
  • FET Feature: -
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Series: NexFET™
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
  • Supplier Device Package: 4-PICOSTAR
  • Vgs (Max): -6V
  • Package / Case: 4-XFLGA
  • Drain to Source Voltage (Vdss): 8V
  • Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 4V
  • Packaging: Cut Tape (CT)
  • Vgs(th) (Max) @ Id: 1.05V @ 250µA
  • Mounting Type: Surface Mount
  • Technology: MOSFET (Metal Oxide)
  • Part Status: Active
  • FET Type: P-Channel
  • detail: P-Channel 8V 7.4A (Ta) 600mW (Ta) Surface Mount 4-PICOSTAR

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