CSD13303W1015 دیتاشیت

CSD13303W1015

مشخصات دیتاشیت

نام دیتاشیت CSD13303W1015
حجم فایل 82.308 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

مشاهده دیتاشیت CSD13303W1015

دانلود دیتاشیت

سایر مستندات

CSD13303W1015 11 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD13303W1015
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1.65W
  • Total Gate Charge (Qg@Vgs): 4.7nC@4.5V
  • Drain Source Voltage (Vdss): 12V
  • Input Capacitance (Ciss@Vds): 715pF@6V
  • Continuous Drain Current (Id): 31A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@1.5A,4.5V
  • Package: BGA-6
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 1.65W (Ta)
  • Base Part Number: CSD133
  • Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
  • FET Feature: -
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Series: NexFET™
  • Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
  • Supplier Device Package: 6-DSBGA
  • Vgs (Max): ±8V
  • Package / Case: 6-UFBGA, DSBGA
  • Drain to Source Voltage (Vdss): 12V
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
  • Packaging: Cut Tape (CT)
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Mounting Type: Surface Mount
  • Technology: MOSFET (Metal Oxide)
  • Part Status: Active
  • FET Type: N-Channel
  • detail: N-Channel 12V 31A (Ta) 1.65W (Ta) Surface Mount 6-DSBGA

محصولات مشابه