CSD17303Q5 دیتاشیت

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مشاهده دیتاشیت CSD17303Q5	دانلود دیتاشیت

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RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 3.2W
Total Gate Charge (Qg@Vgs): 23nC@4.5V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 3420pF@15V
Continuous Drain Current (Id): 32A;100A
Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 2.4mΩ@25A,8V
Package: VSON-8-CLIP
Manufacturer: Texas Instruments
Power Dissipation (Max): 3.2W (Ta)
Base Part Number: CSD173
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
FET Feature: -
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Series: NexFET™
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Supplier Device Package: 8-VSON-CLIP (5x6)
Vgs (Max): +10V, -8V
Package / Case: 8-PowerTDFN
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 8V
Input Capacitance (Ciss) (Max) @ Vds: 3420pF @ 15V
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
detail: N-Channel 30V 32A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6)