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- دیتاشیت DN3135N8-G
DN3135N8-G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | DN3135N8-G |
|---|---|
| حجم فایل | 62.095 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 12 |
دانلود دیتاشیت DN3135N8-G |
دانلود دیتاشیت |
|---|
سایر مستندات
DN3135 12 pages
DN3135K1-G 4 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Microchip Tech DN3135N8-G
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 1.3W
- Drain Source Voltage (Vdss): 350V
- Input Capacitance (Ciss@Vds): 120pF@25V
- Continuous Drain Current (Id): 135mA
- Gate Threshold Voltage (Vgs(th)@Id): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 35Ω@0V,150mA
- Package: SOT-89-3
- Manufacturer: Microchip Tech
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350V
- Current - Continuous Drain (Id) @ 25°C: 135mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 35Ohm @ 150mA, 0V
- Vgs(th) (Max) @ Id: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.3W (Ta)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-243AA (SOT-89)
- Package / Case: TO-243AA
- detail: N-Channel 350V 135mA (Tj) 1.3W (Ta) Surface Mount TO-243AA (SOT-89)