DN3765K4-G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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DN3765K4-G
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حجم فایل
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471.384
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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3
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
2.5W
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Drain Source Voltage (Vdss):
650V
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Input Capacitance (Ciss@Vds):
825pF@25V
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Continuous Drain Current (Id):
300mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
8Ω@150mA,0V
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Package:
TO-252
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Manufacturer:
Microchip Tech
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
650V
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Current - Continuous Drain (Id) @ 25°C:
300mA (Tj)
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Drive Voltage (Max Rds On, Min Rds On):
0V
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Rds On (Max) @ Id, Vgs:
8Ohm @ 150mA, 0V
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Vgs(th) (Max) @ Id:
-
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
825pF @ 25V
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FET Feature:
Depletion Mode
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Power Dissipation (Max):
2.5W (Ta)
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Mounting Type:
Surface Mount
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Supplier Device Package:
TO-252-3
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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detail:
N-Channel 650V 300mA (Tj) 2.5W (Ta) Surface Mount TO-252-3
