دیتاشیت VP2110K1-G
مشخصات دیتاشیت
نام دیتاشیت |
VP2110
|
حجم فایل |
654.076
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
5
|
مشخصات
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Manufacturer:
Microchip Technology
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
100V
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Current - Continuous Drain (Id) @ 25°C:
120mA (Tj)
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Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
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Rds On (Max) @ Id, Vgs:
12Ohm @ 500mA, 10V
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Vgs(th) (Max) @ Id:
3.5V @ 1mA
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
60pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
360mW (Ta)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
TO-236AB (SOT23)
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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detail:
P-Channel 100V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)