LP0701N3-G دیتاشیت

LP0701N3-G

مشخصات دیتاشیت

نام دیتاشیت LP0701N3-G
حجم فایل 59.144 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

دانلود دیتاشیت LP0701N3-G

دانلود دیتاشیت

سایر مستندات

LP0701 14 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Microchip Tech LP0701N3-G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1W
  • Drain Source Voltage (Vdss): 16.5V
  • Input Capacitance (Ciss@Vds): 250pF@15V
  • Continuous Drain Current (Id): 500mA
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@1mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.5Ω@300mA,5V
  • Package: TO-92-3
  • Manufacturer: Microchip Tech
  • Series: -
  • Packaging: Bulk
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16.5V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • detail: P-Channel 16.5V 500mA (Tj) 1W (Tc) Through Hole TO-92

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