دیتاشیت TN0620N3-G-P002
مشخصات دیتاشیت
| نام دیتاشیت |
TN0620
|
| حجم فایل |
614.648
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Microchip Tech TN0620N3-G-P002
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
1W
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Drain Source Voltage (Vdss):
200V
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Input Capacitance (Ciss@Vds):
150pF@25V
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Continuous Drain Current (Id):
250mA
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Gate Threshold Voltage (Vgs(th)@Id):
1.6V@1mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
6Ω@500mA,10V
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Package:
TO-92
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Manufacturer:
Microchip Tech
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
200V
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Current - Continuous Drain (Id) @ 25°C:
250mA (Tj)
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Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
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Rds On (Max) @ Id, Vgs:
6Ohm @ 500mA, 10V
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Vgs(th) (Max) @ Id:
1.6V @ 1mA
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
150pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
1W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-92-3
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
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detail:
N-Channel 200V 250mA (Tj) 1W (Tc) Through Hole TO-92-3
